Spin-Orbit-Torque Switching Mediated by an Antiferromagnetic Insulator
Name
PhysRevApplied.11.044070.pdf
Description
Published version
Size
725.57 KB
Format
Adobe PDF
Checksum (MD5)
1ded57806e05cb295555eb6a5223df03
Author(s)
Wang, Hailong
Finley, Joseph
Zhang, Pengxiang
Han, Jiahao
Hou, Justin T
Liu, Luqiao
Date Issued
2019
Journal
Physical Review Applied
Publisher
American Physical Society (APS)
Version
Final published version
Abstract
© 2019 American Physical Society. We report the observation of antiferromagnetic insulator-mediated spin-orbit-torque switching in Pt/NiO/Co1-xTbx heterostructures. By measuring the current-induced shift in the magnetic hysteresis loops and the second-harmonic anomalous Hall resistance, we quantitatively determine the spin-orbit-torque efficiency in Pt/NiO/Co1-xTbx samples with different NiO thicknesses, uncovering a systematic evolution of the magnetic switching behavior. The measured spin-orbit-torque efficiency is enhanced in the low NiO thickness regime (1-2 nm), highlighting the efficient spin manipulation across a disordered antiferromagnetic insulator.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
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DOI of Published Version
https://doi.org/10.1103/PhysRevApplied.11.044070
