1.8-μm thulium microlasers integrated on silicon
Name
97440U.pdf
Size
632.86 KB
Format
Adobe PDF
Checksum (MD5)
f561ad1ba4ad9f8e3a03093796db8aef
Author(s)
Adam, Thomas N.
Leake, Gerald
Coolbaugh, Douglas
Bradley, Jonathan
Su, Zhan
Magden, Emir Salih
Li, Nanxi
Byrd, Matthew James
Purnawirman, Purnawirman
Watts, Michael
Date Issued
February 2016
Journal
Proceedings Volume 9744, Optical Components and Materials XIII
Publisher
SPIE
Citation
Bradley, Jonathan D. B., et al. "1.8-Μm Thulium Microlasers Integrated on Silicon." Proceedings Volume 9744, Optical Components and Materials XIII, 13-18 February, 2016, San Francisco, California, edited by Shibin Jiang and Michel J. F. Digonnet, SPIE, 2016, p. 97440U. © 2016 SPIE
Version
Final published version
Abstract
A key challenge for silicon photonic systems is the development of compact on-chip light sources. Thulium-doped fiber and waveguide lasers have recently generated interest for their highly efficient emission around 1.8 μm, a wavelength range also of growing interest to silicon-chip based systems. Here, we report on highly compact and low-threshold thulium-doped microcavity lasers integrated with silicon-compatible silicon nitride bus waveguides. The 200-μmdiameter thulium microlasers are enabled by a novel high quality-factor (Q-factor) design, which includes two silicon nitride layers and a silicon dioxide trench filled with thulium-doped aluminum oxide. Similar, passive (undoped) microcavity structures exhibit Q-factors as high as 5.7 × 10[superscript 5] at 1550 nm. We show lasing around 1.8-1.9 μm in aluminum oxide microcavities doped with 2.5 × 10[superscript 20] cm [superscript -3] thulium concentration and under resonant pumping around 1.6 μm. At optimized microcavity-waveguide gap, we observe laser thresholds as low as 773 μW and slope efficiencies as high as 23.5%. The entire fabrication process, including back-end deposition of the gain medium, is silicon-compatible and allows for co-integration with other silicon-based photonic devices for applications such as communications and sensing.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Massachusetts Institute of Technology. Research Laboratory of Electronics
Terms of Use
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
Persistent DSpace Link
DOI of Published Version
https://doi.org/10.1117/12.2213678
