Metrology for electron-beam lithography and resist contrast at the sub-10 nm scale
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Berggren-Metrology.pdf
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Author(s)
Duan, Huigao
Manfrinato, Vitor Riseti
Yang, Joel K. W.
Winston, Donald
Cord, Bryan M.
Berggren, Karl K.
Date Issued
November 2010
Journal
Journal of Vacuum Science and Technology B Microelectronics and Nanometer Structures
Publisher
American Vacuum Society (AVS)
Citation
Duan, Huigao et al. “Metrology for Electron-beam Lithography and Resist Contrast at the Sub-10 Nm Scale.” Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 28.6 (2010): C6H11. © 2010 AVS Science & Technology of Materials, Interfaces, and Processing
Version
Final published version
Abstract
Exploring the resolution limit of electron-beam lithography is of great interest both scientifically and technologically. However, when electron-beam lithography approaches its resolution limit, imaging and metrology of the fabricated structures by using standard scanning electron microscopy become difficult. In this work, the authors adopted transmission-electron and atomic-force microscopies to improve the metrological accuracy and to analyze the resolution limit of electron-beam lithography. With these metrological methods, the authors found that sub-5 nm sparse features could be readily fabricated by electron-beam lithography, but dense 16 nm pitch structures were difficult to yield. Measurements of point- and line-spread functions suggested that the resolution in fabricating sub-10 nm half-pitch structures was primarily limited by the resist-development processes, meaning that the development rates depended on pattern density and/or length scale.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
https://doi.org/10.1116/1.3501359
