Electronic Structure of the Topological Insulator Bi[subscript 2]Se[subscript 3] Using Angle-Resolved Photoemission Spectroscopy: Evidence for a Nearly Full Surface Spin Polarization
Name
Pan-2011-Electronic Structure.pdf
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Author(s)
Pan, Z.-H.
Vescovo, E.
Fedorov, A. V.
Gardner, Dillon Richard
Lee, Young S.
Chu, Shaoyan
Gu, G. D.
Valla, T.
Alternative Title
Electronic Structure of the Topological Insulator Bi2Se3 Using Angle-Resolved Photoemission Spectroscopy: Evidence for a Nearly Full Surface Spin Polarization
Date Issued
June 2011
Journal
Physical Review Letters
Publisher
American Physical Society
Citation
Pan, Z.-H. et al. “Electronic Structure of the Topological Insulator Bi_{2}Se_{3} Using Angle-Resolved Photoemission Spectroscopy: Evidence for a Nearly Full Surface Spin Polarization.” Physical Review Letters 106 (2011). © 2011 American Physical Society.
Version
Final published version
Abstract
We performed high-resolution spin- and angle-resolved photoemission spectroscopy studies of the electronic structure and the spin texture on the surface of Bi[subscript 2]Se[subscript 3], a model TI. By tuning the photon energy, we found that the topological surface state is well separated from the bulk states in the vicinity of kz=Z plane of the bulk Brillouin zone. The spin-resolved measurements in that region indicate a very high degree of spin polarization of the surface state, ∼0.75, much higher than previously reported. Our results demonstrate that the topological surface state on Bi[subscript 2]Se[subscript 3] is highly spin polarized and that the dominant factors limiting the polarization are mainly extrinsic.
MIT Department
Massachusetts Institute of Technology. Department of Materials Science and Engineering
Massachusetts Institute of Technology. Department of Physics
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
https://doi.org/10.1103/PhysRevLett.106.257004
