Characterization of novel III-V semiconductor devices
Name
84842849-MIT.pdf
Description
Full printable version
Size
11.58 MB
Format
Adobe PDF
Checksum (MD5)
792c3e2c61019a3ce07f5dfa336bcbe3
Author(s)
Young, Sue Y
Advisor(s)
Leslie A. Kolodziejski.
Alternative Title
Characterization of novel three-five semiconductor devices
Date Issued
2006
Publisher
Massachusetts Institute of Technology
Abstract
This thesis presents the characterization of tunnel junctions and tunnel-junction-coupled lasers. The reverse-biased leakage current in a tunnel junction can be exploited to tunnel electrons from the valence band of one active region to the conduction band of a second active region. Thus, tunnel-junction-coupled lasers are highly efficient as they allow electrons to stimulate the emission of photons in more than one active region. The electrical characterization of InGaAs/GaAs tunnel junctions is presented. This thesis also gives an overview of the electrical and optical behavior of single-stage lasers as well as two-stage lasers coupled by InGaAs/GaAs tunnel junctions. Telecommunication applications motivated the use of InAs quantum dots and InAsP quantum dashes in the active layer design to provide near-infrared emission.
Description
Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2006.
Includes bibliographical references (p. 68-69).
Subjects
Electrical Engineering and Computer Science.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
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