Dynamic Exciton Funneling by Local Strain Control in a Monolayer Semiconductor
Name
1906.10077.pdf
Description
Submitted version
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1018.83 KB
Format
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Checksum (MD5)
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Author(s)
Moon, Hyowon
Chakraborty, Chitraleema
Peng, Cheng
Englund, Dirk R.
Date Issued
August 2020
Journal
Nano Letters
Publisher
American Chemical Society (ACS)
Citation
Moon, Hyowon et al. “Dynamic Exciton Funneling by Local Strain Control in a Monolayer Semiconductor.” Nano Letters, 20, 9 (August 2020): 6791–6797 © 2020 The Author(s)
Version
Original manuscript
Abstract
The ability to control excitons in semiconductors underlies numerous proposed applications, from excitonic circuits to energy transport. Two dimensional (2D) semiconductors are particularly promising for room-temperature applications due to their large exciton binding energy and enormous stretchability. Although the strain-induced static exciton flux has been observed in predetermined structures, dynamic control of exciton flux represents an outstanding challenge. Here, we introduce a method to tune the bandgap of suspended 2D semiconductors by applying a local strain gradient with a nanoscale tip. This strain allows us to locally and reversibly shift the exciton energy and to steer the exciton flux over micrometer-scale distances. We anticipate that our result not only marks an important experimental tool but will also open a broad range of new applications from information processing to energy conversion.
MIT Department
Massachusetts Institute of Technology. Research Laboratory of Electronics
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
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Creative Commons Attribution-Noncommercial-Share Alike
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DOI of Published Version
https://doi.org/10.1021/acs.nanolett.0c02757
