Characterization of the Effects of Thickness and Composition in Current Induced Phase Change in Sb₂Se₃ and Sb₂S₃
Name
bolzan-bolzan-sb-dmse-2024-thesis.pdf
Description
Thesis PDF
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30.74 MB
Format
Adobe PDF
Checksum (MD5)
979e913e5db05d6de538a9fb96761c29
Author(s)
Bolzan, Maximilian Adriano
Advisor(s)
Hu, Juejun
Date Issued
February 2024
Publisher
Massachusetts Institute of Technology
Abstract
Phase-change memory is a promising new field for the world of memory storage, but current limitations such as slower switching speeds than current forms memory like random-access memory (RAM) and flash memory, have made the implementation of phase-change memory infeasible. Antimony triselenide (Sb₂Se₃) and antimony trisulfide (Sb₂S₃) are two materials that have already been investigated for their applications in solar cells, thermal storage, and other photovoltaic . Samples of Sb₂Se₃ and Sb₂S₃ were produced at two varying thicknesses each, 30 nm and 200 nm in order to determine the optimal combination of thickness and composition. Optimal performance was determined by the endurance of the samples when undergoing current induced phase changes and the difficulty in switching between crystalline and amorphous states. Through a combination of optical microscopy, Raman spectroscopy, and scanning electron microscopy, the samples were characterized and analyzed for their performance in phase cycling. The 200 nm samples and Sb₂Se₃ samples generally demonstrated a greater performance in endurance and lack of dewetting after phase cycling.
MIT Department
Massachusetts Institute of Technology. Department of Materials Science and Engineering
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