Electrical Homogeneity of Large-Area Chemical Vapor Deposited Multilayer Hexagonal Boron Nitride Sheets
Name
1811.12777.pdf
Description
Submitted version
Size
557.46 KB
Format
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Checksum (MD5)
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Author(s)
Hui, Fei
Fang, Wenjing
Leong, Wei Sun
Kpulum, Tewa
Wang, Haozhe
Yang, Hui Ying
Villena, Marco A.
Harris, Gary
Kong, Jing
Lanza, Mario
Date Issued
November 2017
Journal
ACS Applied Materials & Interfaces
Publisher
American Chemical Society (ACS)
Citation
Hui, Fei et al. "Electrical Homogeneity of Large-Area Chemical Vapor Deposited Multilayer Hexagonal Boron Nitride Sheets." ACS Applied Materials & Interfaces 9, 46 (November 2017): 39895-39900 © 2017 American Chemical Society
Version
Original manuscript
Abstract
Large-area hexagonal boron nitride (h-BN) can be grown on polycrystalline metallic substrates via chemical vapor deposition (CVD), but the impact of local inhomogeneities on the electrical properties of the h-BN and their effect in electronic devices is unknown. Conductive atomic force microscopy (CAFM) and probe station characterization show that the tunneling current across the h-BN stack fluctuates up to 3 orders of magnitude from one substrate (Pt) grain to another. Interestingly, the variability in the tunneling current across the h-BN within the same substrate grain is very low, which may enable the use of CVD-grown h-BN in ultra scaled technologies. Keywords: hexagonal boron nitride; chemical vapor deposition; electrical homogeneity; conductive AFM; polycrystalline
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Terms of Use
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
https://doi.org/10.1021/ACSAMI.7B09417
