FITMOS modeling and dynamic on-state characteristic evaluation
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Perreault_FITMOS modeling.pdf
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593.05 KB
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Author(s)
Li, Wei
Page, William
Perreault, David J.
Date Issued
November 2010
Journal
IEEE Energy Conversion Congress and Exposition 2010 (ECCE)
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Li, Wei, William Page, and David J. Perreault. “FITMOS Modeling and Dynamic On-state Characteristic Evaluation.” IEEE Energy Conversion Congress and Exposition 2010 (ECCE). 378–385. © Copyright 2010 IEEE
Version
Final published version
Abstract
This paper presents a study of the detailed characteristics of the new Floating Island and Thick Bottom Oxide Trench Gate MOSFET (FITMOS) developed at Toyota. FITMOS has tremendous potential for automotive applications due to its low on-resistance, improved temperature coefficient of resistance and low gate charge. During the study, the key characteristics of this novel FITMOS were investigated; a behavioral model was developed in SPICE for simulation and optimization purposes, and their applications in the design of automotive power electronics was explored. In this study, we also identify a previously unrecognized phenomenon in the FITMOS MOSFET. In particular, we show that the on-state resistance of the device depends on both frequency and peak di/dt at a given frequency. This dynamic on-resistance variation can have a significant application impact.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Massachusetts Institute of Technology. Laboratory for Electromagnetic and Electronic Systems
Massachusetts Institute of Technology. Research Laboratory of Electronics
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
https://doi.org/10.1109/ECCE.2010.5618005
