A Switch-level Simulation Model for Integrated Logic Circuits
Name
MIT-LCS-TR-259.pdf
Size
8.12 MB
Format
Adobe PDF
Checksum (MD5)
e4e427dcaea4ddfcd42cc57a57159aea
Author(s)
Bryant, Randal Everitt
Advisor(s)
Dennis, Jack B.
Date Issued
March 1981
Series/Report no.
MIT-LCS-TR-259
Abstract
Switch-level simulators model a metal oxide semiconductor (MOS) large scale integrated (LSI) circuits as a network of transistor "switches". They can simulate many aspects of MOS circuits which cannot be expressed in the Boolean logic gate model, such as bidrecttional pass transistors, dynamic storage, and charge sharing.
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