Single-Layer Behavior and Its Breakdown in Twisted Graphene Layers
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Luican-2011-Single-Layer Behavio.pdf
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Author(s)
Luican, A.
Li, Guohong
Reina, Alfonso
Kong, Jing
Nair, R. R.
Novoselov, Kostya S.
Geim, A. K.
Andrei, E. Y.
Date Issued
March 2011
Journal
Physical Review Letters
Publisher
American Physical Society
Citation
Luican, A. et al. “Single-Layer Behavior and Its Breakdown in Twisted Graphene Layers.” Physical Review Letters 106.12 (2011) © 2011 American Physical Society
Version
Final published version
Abstract
We report high magnetic field scanning tunneling microscopy and Landau level spectroscopy of twisted graphene layers grown by chemical vapor deposition. For twist angles exceeding ∼3° the low energy carriers exhibit Landau level spectra characteristic of massless Dirac fermions. Above 20° the layers effectively decouple and the electronic properties are indistinguishable from those in single-layer graphene, while for smaller angles we observe a slowdown of the carrier velocity which is strongly angle dependent. At the smallest angles the spectra are dominated by twist-induced van Hove singularities and the Dirac fermions eventually become localized. An unexpected electron-hole asymmetry is observed which is substantially larger than the asymmetry in either single or untwisted bilayer graphene.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Massachusetts Institute of Technology. Department of Materials Science and Engineering
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
https://doi.org/10.1103/PhysRevLett.106.126802
