Dual Threshold Voltage Integrated Organic Technology for Ultralow-power Circuits
Name
Nausieda-2009-Dual Threshold Voltage Integrated Organic Technology for Ultralow-power Circuits.pdf
Size
1.38 MB
Format
Adobe PDF
Checksum (MD5)
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Author(s)
Sodini, Charles G.
Nausieda, Ivan A.
Ryu, Kevin K.
He, David Da
Akinwande, Akintunde Ibitayo
Bulovic, Vladimir
Date Issued
December 2009
Journal
IEEE International Electron Devices Meeting
Publisher
Institute of Electrical and Electronics Engineers
Citation
Nausieda, I. et al. “Dual threshold voltage integrated organic technology for ultralow-power circuits.” Electron Devices Meeting (IEDM), 2009 IEEE International. 2009. 1-4. © 2009, IEEE
Version
Final published version
Abstract
For the first time, we demonstrate control of organic thinfilm transistor's (OTFT) threshold voltage (V [subscript T]) by modifying the gate work function. We present a near-room-temperature, fully lithographic process to fabricate integrated pentacene dual V [subscript T] OTFTs suitable for large-area and flexible mixed signal circuits. Platinum and aluminum are used as the gate metals for the high V [subscript T] (more depletion-like) and low V [subscript T] (more enhancement-like) p-channel devices, respectively. The availability of a high V [subscript T] device enables area-efficient zero-VGS current source loads. We demonstrate positive noise margin inverters which use pico Watts of power and a 3 V supply. Compared to a single V [subscript T] implementation, the dual V [subscript T] inverter occupies an area that is 30Ã Â smaller, and is 17Ã Â faster. These results show that p-channel only organic technologies can produce functional and low-power circuits without integrating a complementary device.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Massachusetts Institute of Technology. Microsystems Technology Laboratories
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
https://doi.org/10.1109/IEDM.2009.5424345
