Characterization and analysis of process variability in deeply-scaled MOSFETs
Name
792745892-MIT.pdf
Description
Full printable version
Size
21.4 MB
Format
Adobe PDF
Checksum (MD5)
92e4ed6af461dd21abee8918935827f3
Author(s)
Balakrishnan, Karthik, Ph. D. Massachusetts Institute of Technology
Advisor(s)
Duane S. Boning.
Date Issued
2012
Publisher
Massachusetts Institute of Technology
Abstract
Variability characterization and analysis in advanced technologies are needed to ensure robust performance as well as improved process capability. This thesis presents a framework for device variability characterization and analysis. Test structure and test circuit design, identification of significant effects in design of experiments, and decomposition approaches to quantify variation and its sources are explored. Two examples of transistor variability characterization are discussed: contact plug resistance variation within the context of a transistor, and AC, or short time-scale, variation in transistors. Results show that, with careful test structure and circuit design and ample measurement data, interesting trends can be observed. Among these trends are (1) a distinct within-die spatial signature of contact plug resistance and (2) a picosecond-accuracy delay measurement on transistors which reveals the presence of excessive external parasitic gate resistance. Measurement results obtained from these test vehicles can aid in both the understanding of variations in the fabrication process and in efforts to model variations in transistor behavior.
Description
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2012.
Cataloged from PDF version of thesis.
Includes bibliographical references (p. 137-147).
Subjects
Electrical Engineering and Computer Science.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
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