Photoluminescence quenching of organic thin films by transparent conductive oxides
Name
71227460-MIT.pdf
Description
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Author(s)
Mei, Jun, S.B. Massachusetts Institute of Technology
Advisor(s)
Vladimir Bulović.
Date Issued
2006
Publisher
Massachusetts Institute of Technology
Abstract
One fundamental challenge in designing organic light-emitting diodes is luminescence quenching near an electrode. In this work, we investigate the underlying mechanism behind luminescence quenching by measuring the reduction in Alq3 photoluminescence due to SnO02. Using an analytical model and a Monte Carlo simulation for exciton dynamics in amorphous organic solids, we find that the exciton diffusion length in bulk Alq3 is in the range of 70--80 A. We also find that for SnO2 films deposited without oxygen in the sputtering ambient, resonant energy transfer from Alq3 to SnO2 is the dominant quenching mechanism. By varying the oxygen content in the Ar/C)2 sputtering gas mixture, we find that the energy transfer distance decreases from 10--25 A for 0% 02 to less than 2 A for 10% 02. Our experimental results suggest that because excess oxygen reduces oxygen vacancies and defect electronic states in SnO2, it leads to a smaller spectral overlap between the emission of Alq3 and the absorption of SnO2, thereby shortening the energy transfer distance and reducing the quenching capability of SnO2.
Description
Thesis (S.B.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2006.
Includes bibliographical references (p. 83-86).
Subjects
Materials Science and Engineering.
MIT Department
Massachusetts Institute of Technology. Department of Materials Science and Engineering
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