Uniaxial strain in graphene by Raman spectroscopy: G peak splitting, Grüneisen parameters, and sample orientation
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Mohiuddin-2009-Uniaxial strain in g.pdf
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Author(s)
Mohiuddin, T. M. G.
Lombardo, A.
Nair, R. R.
Bonetti, A.
Savini, G.
Jalil, R.
Bonini, Nicola
Basko, D. M.
Galiotis, C.
Marzari, Nicola
Date Issued
May 2009
Journal
Physical Review B
Publisher
American Physical Society
Citation
Mohiuddin, T. M. G. et al. “Uniaxial strain in graphene by Raman spectroscopy: G peak splitting, Grüneisen parameters, and sample orientation.” Physical Review B 79.20 (2009): 205433. (C) 2010 The American Physical Society.
Version
Final published version
Abstract
We uncover the constitutive relation of graphene and probe the physics of its optical phonons by studying its Raman spectrum as a function of uniaxial strain. We find that the doubly degenerate E[subscript 2g] optical mode splits in two components: one polarized along the strain and the other perpendicular. This splits the G peak into two bands, which we call G+ and G−, by analogy with the effect of curvature on the nanotube G peak. Both peaks redshift with increasing strain and their splitting increases, in excellent agreement with first-principles calculations. Their relative intensities are found to depend on light polarization, which provides a useful tool to probe the graphene crystallographic orientation with respect to the strain. The 2D and 2D′ bands also redshift but do not split for small strains. We study the Grüneisen parameters for the phonons responsible for the G, D, and D′ peaks. These can be used to measure the amount of uniaxial or biaxial strain, providing a fundamental tool for nanoelectronics, where strain monitoring is of paramount importance
MIT Department
Massachusetts Institute of Technology. Department of Materials Science and Engineering
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DOI of Published Version
http://dx.doi.org/10.1103/PhysRevB.79.205433
