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  4. Atomic structure and defect dynamics of monolayer lead iodide nanodisks with epitaxial alignment on graphene

Atomic structure and defect dynamics of monolayer lead iodide nanodisks with epitaxial alignment on graphene

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sword-2020-09-10T12:44:36.original.xml (130 B)
Original SWORD entry document
Author(s)
Zhu, Taishan
•
France-Lanord, Arthur
•
Grossman, Jeffrey C.
Date Issued
February 2020
Journal
Nature Communications
Publisher
Springer Science and Business Media LLC
Citation
Sinha, Sapna et al. “Atomic structure and defect dynamics of monolayer lead iodide nanodisks with epitaxial alignment on graphene.” Nature Communications, 11, 1 (February 2020): 823 © 2020 The Author(s)
Version
Final published version
Abstract
Lead Iodide (PbI₂) is a large bandgap 2D layered material that has potential for semiconductor applications. However, atomic level study of PbI2 monolayer has been limited due to challenges in obtaining thin crystals. Here, we use liquid exfoliation to produce monolayer PbI2 nanodisks (30-40 nm in diameter and > 99% monolayer purity) and deposit them onto suspended graphene supports to enable atomic structure study of PbI2. Strong epitaxial alignment of PbI2 monolayers with the underlying graphene lattice occurs, leading to a phase shift from the 1 T to 1 H structure to increase the level of commensuration in the two lattice spacings. The fundamental point vacancy and nanopore structures in PbI2 monolayers are directly imaged, showing rapid vacancy migration and self-healing. These results provide a detailed insight into the atomic structure of monolayer PbI2, and the impact of the strong van der Waals interaction with graphene, which has importance for future applications in optoelectronics.
MIT Department
Massachusetts Institute of Technology. Department of Materials Science and Engineering
Massachusetts Institute of Technology. Research Laboratory of Electronics
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Creative Commons Attribution 4.0 International license
https://creativecommons.org/licenses/by/4.0/
Persistent DSpace Link
https://hdl.handle.net/1721.1/127260
DOI of Published Version
https://doi.org/10.1038/S41467-020-14481-Z
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