Non-monotonic effect of growth temperature on carrier collection in SnS solar cells
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Chakraborty-SnSPaperFull.pdf
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1.21 MB
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Author(s)
Yang, C.
Gordon, R. G.
Chakraborty, Rupak
Steinmann, Vera
Mangan, Niall Mari
Brandt, Riley E
Poindexter, Jeremy Roger
Jaramillo, Rafael
Mailoa, Jonathan P
Hartman, Katherine
Date Issued
May 2015
Journal
Applied Physics Letters
Publisher
AIP Publishing
Citation
Chakraborty, R. et al. “Non-Monotonic Effect of Growth Temperature on Carrier Collection in SnS Solar Cells.” Applied Physics Letters 106, 20 (May 2015): 203901 © 2015 AIP Publishing LLC
Version
Author's final manuscript
Abstract
We quantify the effects of growth temperature on material and device properties of thermally evaporated SnS thin-films and test structures. Grain size, Hall mobility, and majority-carrier concentration monotonically increase with growth temperature. However, the charge collection as measured by the long-wavelength contribution to short-circuit current exhibits a non-monotonic behavior: the collection decreases with increased growth temperature from 150 °C to 240 °C and then recovers at 285 °C. Fits to the experimental internal quantum efficiency using an opto-electronic model indicate that the non-monotonic behavior of charge-carrier collection can be explained by a transition from drift- to diffusion-assisted components of carrier collection. The results show a promising increase in the extracted minority-carrier diffusion length at the highest growth temperature of 285 °C. These findings illustrate how coupled mechanisms can affect early stage device development, highlighting the critical role of direct materials property measurements and simulation.
MIT Department
Massachusetts Institute of Technology. Department of Mechanical Engineering
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DOI of Published Version
https://doi.org/10.1063/1.4921326
