Characterization and modeling of pattern dependencies and time evolution in plasma etching
Name
613206608-MIT.pdf
Description
Full printable version
Size
8.49 MB
Format
Adobe PDF
Checksum (MD5)
60284aaae034f2e109865e68a1597ca7
Author(s)
Farahanchi, Ali
Advisor(s)
Duane S. Boning.
Date Issued
2009
Publisher
Massachusetts Institute of Technology
Abstract
A quantitative model capturing pattern dependent effects and time evolution of the etch rate in Deep Reactive Ion Etching (DRIE) is presented. DRIE is a key process for pattern formation in semiconductor fabrication. Non-uniformities are caused due to microloading and aspect ratio dependencies. The etch rate varies over time and lateral etch consumes some of the etching species. This thesis contributes a physical analysis for capturing and modeling microloading, aspect ratio dependencies, effects of lateral etch and time evolution of the etch rate. This methodology is applied to the study of etching variation on silicon wafers; the integrated model is able to predict pattern density and feature size dependent non-uniformities in trench depth and time evolution of the etch rate. Previous studies of variation in plasma etching have characterized microloading and aspect ratio dependent etching (ARDE) as distinct constant causes for etch non-uniformity. In contrast to these previous works, we present here a time-based methodology for vertical and lateral etch.
Description
Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, June 2009.
"May 2008." Cataloged from PDF version of thesis.
Includes bibliographical references (p. 43).
Subjects
Electrical Engineering and Computer Science.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Terms of Use
M.I.T. theses are protected by
copyright. They may be viewed from this source for any purpose, but
reproduction or distribution in any format is prohibited without written
permission. See provided URL for inquiries about permission.
copyright. They may be viewed from this source for any purpose, but
reproduction or distribution in any format is prohibited without written
permission. See provided URL for inquiries about permission.
Persistent DSpace Link
