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Experimental analysis of two measurement techniques to characterize photodiode linearity

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Ramaswamy-2009-Experimental analysis of two measurement techniques to characterize photodiode linearity.pdf

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Author(s)
Ramaswamy, Anand
•
Nunoya, Nobuhiro
•
Piels, Molly
•
Johansson, Leif A.
•
Coldren, Larry A.
•
Bowers, John E.
•
Hastings, Alexander S.
•
Williams, Keith J.
•
Klamkin, Jonathan
Date Issued
December 2009
Journal
International Topical Meeting on Microwave Photonics, 2009. MWP '09
Publisher
Institute of Electrical and Electronics Engineers
Citation
Ramaswamy, A. et al. “Experimental analysis of two measurement techniques to characterize photodiode linearity.” Microwave Photonics, 2009. MWP '09. International Topical Meeting on. 2009. 1-4. ©2009 IEEE.
Version
Final published version
Abstract
As photodiodes become more linear, accurately characterizing their linearity becomes very challenging. We compare the IMD3 results from a standard two tone measurement to those from a more complex three tone measurement technique. A Ge n-i-p waveguide photodetector on Silicon-on-Insulator (SOI) substrate is used for the comparison. Additionally, we analyze, via simulation, the limitations of the measurement system in determining the distortion of highly linear photodiodes.
MIT Department
Lincoln Laboratory
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
Persistent DSpace Link
http://hdl.handle.net/1721.1/60287
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