Harnessing Quantum Capacitance in 2D Material/Molecular Layer Junctions for Novel Electronic Device Functionality
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nanomaterials-14-00972.pdf
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Author(s)
Papnai, Bhartendu
Chen, Ding-Rui
Ghosh, Rapti
Yen, Zhi-Long
Chen, Yu-Xiang
Rehman, Khalil Ur
Chen, Hsin-Yi Tiffany
Hsieh, Ya-Ping
Hofmann, Mario
Date Issued
June 3, 2024
Journal
Nanomaterials
Publisher
MDPI AG
Citation
Papnai, B.; Chen, D.-R.; Ghosh, R.; Yen, Z.-L.; Chen, Y.-X.; Rehman, K.U.; Chen, H.-Y.T.; Hsieh, Y.-P.; Hofmann, M. Harnessing Quantum Capacitance in 2D Material/Molecular Layer Junctions for Novel Electronic Device Functionality. Nanomaterials 2024, 14, 972.
Version
Final published version
Abstract
Two-dimensional (2D) materials promise advances in electronic devices beyond Moore’s scaling law through extended functionality, such as non-monotonic dependence of device parameters on input parameters. However, the robustness and performance of effects like negative differential resistance (NDR) and anti-ambipolar behavior have been limited in scale and robustness by relying on atomic defects and complex heterojunctions. In this paper, we introduce a novel device concept that utilizes the quantum capacitance of junctions between 2D materials and molecular layers. We realized a variable capacitance 2D molecular junction (vc2Dmj) diode through the scalable integration of graphene and single layers of stearic acid. The vc2Dmj exhibits NDR with a substantial peak-to-valley ratio even at room temperature and an active negative resistance region. The origin of this unique behavior was identified through thermoelectric measurements and ab initio calculations to be a hybridization effect between graphene and the molecular layer. The enhancement of device parameters through morphology optimization highlights the potential of our approach toward new functionalities that advance the landscape of future electronics.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
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DOI of Published Version
https://doi.org/10.3390/nano14110972
