Discovery of robust in-plane ferroelectricity in atomic-thick SnTe
Name
SnTe_ferroelectricity_Combined.pdf
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2.67 MB
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Author(s)
Chang, Kai
Liu, Junwei
Lin, Haicheng
Wang, Na
Zhao, Kun
Zhang, Anmin
Jin, Feng
Zhong, Yong
Hu, Xiaopeng
Duan, Wenhui
Date Issued
July 2016
Journal
Science
Publisher
American Association for the Advancement of Science (AAAS)
Citation
Chang, Kai et al. “Discovery of Robust in-Plane Ferroelectricity in Atomic-Thick SnTe.” Science 353, 6296 (July 2016): 274–278 © 2016 American Association for the Advancement of Science
Version
Author's final manuscript
Abstract
Stable ferroelectricity with high transition temperature in nanostructures is needed for miniaturizing ferroelectric devices. Here, we report the discovery of the stable in-plane spontaneous polarization in atomic-thick tin telluride (SnTe), down to a 1-unit cell (UC) limit. The ferroelectric transition temperature Tcof 1-UC SnTe film is greatly enhanced from the bulk value of 98 kelvin and reaches as high as 270 kelvin. Moreover, 2- to 4-UC SnTe films show robust ferroelectricity at room temperature.The interplay between semiconducting properties and ferroelectricity in this two-dimensional material may enable a wide range of applications in nonvolatile high-density memories, nanosensors, and electronics.
MIT Department
Massachusetts Institute of Technology. Department of Physics
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DOI of Published Version
https://doi.org/10.1126/SCIENCE.AAD8609
