Cavity-Enhanced IR Absorption in Planar Chalcogenide Glass Microdisk Resonators: Experiment and Analysis
Name
Hu-2009-Cavity-Enhanced IR Absorption in Planar Chalcogenide Glass Microdisk Resonators Experiment and Analysis.pdf
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Author(s) • • • •
Kimerling, Lionel C.
Hu, Juejun
Carlie, Nathan
Petit, Laeticia
Agarwal, Anuradha Murthy
Date Issued
October 2009
Journal
Journal of Lightware Technology
Publisher
Institute of Electrical and Electronics Engineers
Citation
Juejun Hu et al. “Cavity-Enhanced IR Absorption in Planar Chalcogenide Glass Microdisk Resonators: Experiment and Analysis.” Lightwave Technology, Journal of 27.23 (2009): 5240-5245. © Copyright 2009 IEEE
Version
Final published version
Abstract
Planar microdisk optical resonators fabricated from Ge[subscript 23]Sb[subscript 7]S[subscript 70] chalcogenide glass on a silicon substrate are applied for cavity-enhanced spectroscopic measurement of chemical molecular absorption fingerprint. A 0.02 cm- 1 detection limit for these devices is demonstrated. This detection limit represents a threefold improvement as compared to a straight waveguide sensor, while the physical device length is reduced by 40-fold. The reduction in device footprint with enhanced sensitivity makes the structure attractive for ldquosensor-on-a-chiprdquo device applications. We also present a design optimization approach for cavity-enhanced IR absorption spectroscopy using traveling-wave resonators, which indicates that further performance improvement can be achieved in optimally coupled, low-loss resonant cavities.
Subjects
sulfur compounds
optical resonators
microresonators
integrated optics
IR spectroscopy
glass
chemical analysis
Amorphous materials
MIT Department
MIT Materials Research Laboratory
Massachusetts Institute of Technology. Department of Materials Science and Engineering
Terms of Use
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
https://doi.org/10.1109/jlt.2009.2030899