InGaP solar cell on Ge-on-Si virtual substrate for novel solar power conversion
Name
document(1).pdf
Description
Published version
Size
2.07 MB
Format
Adobe PDF
Checksum (MD5)
d0405a4b9245d2b757ddc3def8bcb751
Author(s)
Kim, TW
Albert, Brian Ross
Kimerling, LC
Michel, J
Date Issued
2018
Journal
Journal of Applied Physics
Publisher
AIP Publishing
Version
Final published version
Abstract
© 2018 Author(s). InGaP single-junction solar cells are grown on lattice-matched Ge-on-Si virtual substrates using metal-organic chemical vapor deposition. Optoelectronic simulation results indicate that the optimal collection length for InGaP single-junction solar cells with a carrier lifetime range of 2-5 ns is wider than approximately 1 μm. Electron beam-induced current measurements reveal that the threading dislocation density (TDD) of InGaP solar cells fabricated on Ge and Ge-on-Si substrates is in the range of 104-3 × 107 cm-2. We demonstrate that the open circuit voltage (Voc) of InGaP solar cells is not significantly influenced by TDDs less than 2 × 106 cm-2. Fabricated InGaP solar cells grown on a Ge-on-Si virtual substrate and a Ge substrate exhibit Voc in the range of 0.96 to 1.43 V under an equivalent illumination in the range of ∼0.5 Sun. The estimated efficiency of the InGaP solar cell fabricated on the Ge-on-Si virtual substrate (Ge substrate) at room temperature for the limited incident spectrum spanning the photon energy range of 1.9-2.4 eV varies from 16.6% to 34.3%.
MIT Department
Massachusetts Institute of Technology. Materials Processing Center
Massachusetts Institute of Technology. Department of Materials Science and Engineering
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
Persistent DSpace Link
DOI of Published Version
10.1063/1.5018082
https://doi.org/10.1063/1.5018082
