Ultrahigh thermal conductivity in isotope-enriched cubic boron nitride
Name
ultrahigh.pdf
Size
5.28 MB
Format
Adobe PDF
Checksum (MD5)
57b4eb85c9a27fe52a20d8d3d8808911
Author(s)
Chen, Ke
Song, Bai
Ravichandran, Navaneetha K.
Zheng, Qiye
Chen, Xi
Lee, Hwijong
Sun, Haoran
Li, Sheng
Udalamatta Gamage, Geethal Amila Gamage
Tian, Fei
Date Issued
January 2020
Journal
Science
Publisher
American Association for the Advancement of Science (AAAS)
Citation
Chen, Ke et al. "Ultrahigh thermal conductivity in isotope-enriched cubic boron nitride." Science 367, 6477 (January 2020): 555-559 © 2020 The Authors
Version
Author's final manuscript
Abstract
Materials with high thermal conductivity (κ) are of technological importance and fundamental interest. We grew cubic boron nitride (cBN) crystals with controlled abundance of boron isotopes and measured κ greater than 1600 watts per meter-kelvin at room temperature in samples with enriched [superscript 10]B or [superscript 11]B. In comparison, we found that the isotope enhancement of κ is considerably lower for boron phosphide and boron arsenide as the identical isotopic mass disorder becomes increasingly invisible to phonons. The ultrahigh κ in conjunction with its wide bandgap (6.2 electron volts) makes cBN a promising material for microelectronics thermal management, high-power electronics, and optoelectronics applications.
MIT Department
Massachusetts Institute of Technology. Department of Mechanical Engineering
Terms of Use
Creative Commons Attribution-Noncommercial-Share Alike
Persistent DSpace Link
DOI of Published Version
https://doi.org/10.1126/science.aaz6149
