The effect of excess atomic volume on He bubble formation at fcc-bcc interfaces
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DBUMWN_APL_open-access.pdf
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2.09 MB
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Author(s)
Demkowicz, Michael J.
Usov, I.
Bhattacharyya, D.
Wang, Y. Q.
Nastasi, M.
Misra, Amit
Date Issued
October 2010
Journal
Applied Physics Letters
Publisher
American Institute of Physics
Citation
Demkowicz, M. J. et al. “The effect of excess atomic volume on He bubble formation at fcc–bcc interfaces.” Applied Physics Letters 97.16 (2010): 161903.
Version
Author's final manuscript
Abstract
Atomistic modeling shows that Cu–Nb and Cu–V interfaces contain high excess atomic volume due to constitutional vacancy concentrations of ∼ 5 at. % and ∼ 0.8 at. %., respectively. This finding is supported by experiments demonstrating that an approximately fivefold higher He concentration is required to observe He bubbles via through-focus transmission electron microscopy at Cu–Nb interfaces than in Cu–V interfaces. Interfaces with structures tailored to minimize precipitation and growth of He bubbles may be used to design damage-resistant composites for fusion reactors.
MIT Department
Massachusetts Institute of Technology. Department of Materials Science and Engineering
Terms of Use
Creative Commons Attribution-Noncommercial-Share Alike 3.0
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DOI of Published Version
https://doi.org/10.1063/1.3502594
