High hole and electron mobilities using Strained Si/Strained Ge heterostructures
Name
AMMNS010.pdf
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301.12 KB
Format
Adobe PDF
Checksum (MD5)
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Author(s)
Gupta, Saurabh
Lee, Minjoo L.
Leitz, Christopher W.
Fitzgerald, Eugene A.
Date Issued
January 2004
Series/Report no.
Advanced Materials for Micro- and Nano-Systems (AMMNS);
Abstract
PMOS and NMOS mobility characteristics of the dual channel (strained Si/strained Ge) heterostructure have been reviewed. It is shown that the dual channel heterostructure can provide substantially enhanced mobilities for both electrons and holes. However, germanium interdiffusion from the germanium rich buried layer into the underlying buffer layer could potentially reduce the hole mobility enhancements.
Subjects
strained-Ge
SiGe
germanium
MOSFET
mobility
strained-Si
pMOSFET
nMOSFET
germanium-diffusion
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