Thermoelectric Properties of n-type ZrNiPb-Based Half-Heuslers
Name
Thermoelectric Properties of n-type ZrNiPb-Based Half-Heuslers.pdf
Size
1.03 MB
Format
Adobe PDF
Checksum (MD5)
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Author(s)
Mao, Jun
Zhou, Jiawei
Zhu, Hangtian
Liu, Zihang
Zhang, Hao
He, Ran
Chen, Gang
Ren, Zhifeng
Date Issued
January 2017
Journal
Chemistry of Materials
Publisher
American Chemical Society (ACS)
Citation
Mao, Jun et al. "Thermoelectric Properties of n-type ZrNiPb-Based Half-Heuslers." Chemistry of Materials 29, 2 (January 2017): 867-872 © 2017 American Chemical Society
Abstract
Here we investigate the half-Heusler ZrNiPb as a n-type thermoelectric material. Our results show that the n-type ZrNiPb-based materials can achieve high peak power factors, ∼50 μW cm⁻¹ K⁻², by optimally tuning the carrier concentration via Bi doping. By further Sn-alloying in Pb site, we achieve a significant reduction of lattice thermal conductivity while maintaining the power factor almost unchanged and hence noticeably improve the ZT. Our work demonstrates that n-type ZrNiPb-based half-Heuslers are promising thermoelectric materials.
MIT Department
Massachusetts Institute of Technology. Department of Mechanical Engineering
Persistent DSpace Link
DOI of Published Version
https://doi.org/10.1021/acs.chemmater.6b04898
