Modeling of chemical mechanical polishing using fixed abrasive technology
Name
48985169-MIT.pdf
Description
Full printable version
Size
7.32 MB
Format
Adobe PDF
Checksum (MD5)
5629734058eedabc9203c6f5c52d8cda
Author(s)
Dutt, Radhika, 1978-
Advisor(s)
Duane S. Boning.
Date Issued
2001
Publisher
Massachusetts Institute of Technology
Abstract
Chemical Mechanical Polishing (CMP) is conventionally carried out using abrasive slurry and a polishing pad. An alternative process is the "fixed abrasive" polish. Existing models, which accurately predict oxide thickness variations across a chip for the conventional CMP process, have not previously been tested for the fixed abrasive process. In this study wafers were polished using the fixed abrasive pad and the data fitted against the density and step-height model. Results show that little down area polish occurs with the use of the fixed abrasive pad, except in areas of low-density. The step height model which accounts for contact height, shows improved accuracy over the density model for areas of low density. The density model however is sufficiently accurate for areas of higher density. Modeling new variants of the fixed abrasive pad may require further study and model extensions related to additional effects and pad properties.
Description
Thesis (M.Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, February 2001.
Includes bibliographical references (leaves 61-62).
Subjects
Electrical Engineering and Computer Science.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Terms of Use
M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.
Persistent DSpace Link
