Ultra-narrow-linewidth erbium-doped lasers on a silicon photonics platform
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1053712.pdf
Description
Published version
Size
1.28 MB
Format
Adobe PDF
Checksum (MD5)
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Author(s)
Li, Nanxi
Singh, Neetesh
Purnawirman, Purnawirman
Magden, Emir
Singh, Gurpreet
Baldycheva, Anna
Hosseini, Ehsan
Sun, Jie
Moresco, Michele
Adam, Thomas
Date Issued
February 22, 2018
Publisher
SPIE
Citation
Li, Nanxi, Singh, Neetesh, Purnawirman, Purnawirman, Magden, Emir, Singh, Gurpreet et al. 2018. "Ultra-narrow-linewidth erbium-doped lasers on a silicon photonics platform."
Version
Final published version
Abstract
© COPYRIGHT SPIE. Downloading of the abstract is permitted for personal use only. We report ultra-narrow-linewidth erbium-doped aluminum oxide (Al 2 O 3 :Er 3+ ) distributed feedback (DFB) lasers with a wavelength-insensitive silicon-compatible waveguide design. The waveguide consists of five silicon nitride (SiN x ) segments buried under silicon dioxide (SiO 2 ) with a layer Al 2 O 3 :Er 3+ deposited on top. This design has a high confinement factor (> 85%) and a near perfect (> 98%) intensity overlap for an octave-spanning range across near infrared wavelengths (950-2000 nm). We compare the performance of DFB lasers in discrete quarter phase shifted (QPS) cavity and distributed phase shifted (DPS) cavity. Using QPS-DFB configuration, we obtain maximum output powers of 0.41 mW, 0.76 mW, and 0.47 mW at widely spaced wavelengths within both the C and L bands of the erbium gain spectrum (1536 nm, 1566 nm, and 1596 nm). In a DPS cavity, we achieve an order of magnitude improvement in maximum output power (5.43 mW) and a side mode suppression ratio (SMSR) of > 59.4 dB at an emission wavelength of 1565 nm. We observe an ultra-narrow linewidth of ΔνDPS = 5.3 ± 0.3 kHz for the DPS-DFB laser, as compared to ΔνQPS = 30.4 ± 1.1 kHz for the QPS-DFB laser, measured by a recirculating self-heterodyne delayed interferometer (RSHDI). Even narrower linewidth can be achieved by mechanical stabilization of the setup, increasing the pump absorption efficiency, increasing the output power, or enhancing the cavity Q.
MIT Department
Massachusetts Institute of Technology. Research Laboratory of Electronics
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DOI of Published Version
https://doi.org/10.1117/12.2288791
