Internal Dielectric Transduction in Bulk-Mode Resonators
Name
Weinstein-2009-Internal Dielectric Transduction in Bulk-Mode Resonators.pdf
Size
1.07 MB
Format
Adobe PDF
Checksum (MD5)
c6bfe79c2f70f70fba63867b99347929
Author(s)
Weinstein, Dana
Bhave, Sunil A.
Date Issued
December 2009
Journal
Journal of Microelectromechanical Systems
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Weinstein, D., and S.A. Bhave. “Internal Dielectric Transduction in Bulk-Mode Resonators.” Journal of Microelectromechanical Systems 18.6 (2009): 1401–1408. © Copyright 2009 IEEE
Version
Final published version
Abstract
This paper investigates electrostatic transduction of a longitudinal-mode silicon acoustic resonator with internal dielectric films. Geometric optimization of internal dielectrically transduced resonators is derived analytically and shown experimentally. Analysis of internal dielectric transduction shows a maximum transduction efficiency with thin dielectric films at points of maximum strain of the desired resonant mode. With this design optimization, a silicon bar resonator is realized with a ninth harmonic resonance of 4.5 GHz and a quality factor of over 11 000, resulting in a record high f middotQ product in silicon of 5.1 times 10[superscript 13]. The novel dielectric transducer demonstrates improved resonator performance with increasing frequency, with optimal transduction efficiency when the acoustic wavelength is twice the dielectric thickness. Such frequency scaling behavior enables the realization of resonators up to the super-high-frequency domain.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Terms of Use
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
Persistent DSpace Link
DOI of Published Version
https://doi.org/10.1109/jmems.2009.2032480
