Modeling of GaN/AlN heterostructure-based nano pressure sensors
Name
Patil-2009-Modeling of GaNAlN heterostructure-based nano pressure sensors.pdf
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370.16 KB
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514cee531840b1959c752f107c162d83
Author(s)
Sinha, Niraj
Melnik, R. V. N.
Patil, S.
Date Issued
August 2009
Journal
Proceedings of SPIE--the International Society for Optical Engineering; v.7402
Publisher
The International Society for Optical Engineering
Citation
Patil, S., N. Sinha, and R. V. N. Melnik. “Modeling of GaN/AlN heterostructure-based nano pressure sensors.” Nanoengineering: Fabrication, Properties, Optics, and Devices VI. Ed. Elizabeth A. Dobisz & Louay A. Eldada. San Diego, CA, USA: SPIE, 2009. 74020C-8. © 2009 SPIE--The International Society for Optical Engineering
Version
Final published version
Abstract
We quantify the influence of thermopiezoelectric effects in nano-sized Al[subscript x]Ga[subscript 1-x]N/GaN heterostructures for pressure sensor applications based on the barrier height modulation principle. We use a fully coupled thermoelectromechanical formulation, consisting of balance equations for heat transfer, electrostatics and mechanical field. To estimate the vertical transport current in the heterostructures, we have developed a multi-physics model incorporating thermionic emission, thermionic field emission, and tunneling as the current transport mechanisms. A wide range of thermal (0-300 K) and pressure (0-10 GPa) loadings has been considered. The results for the thermopiezoelectric modulation of the barrier height in these heterostructures have been obtained and optimized. The calculated current shows a linear decrease with increasing pressure. The linearity in pressure response suggests that Al[subscript x]Ga[subscript 1-x]N/GaN heterostructure-based devices are promising candidates for pressure sensor applications under severe environmental conditions.
MIT Department
Massachusetts Institute of Technology. Department of Mechanical Engineering
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
http://dx.doi.org/10.1117/12.826267
