N-polar AlN buffer growth by MOVPE for transistor applications
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1811.03953.pdf
Description
Accepted version
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325.29 KB
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Checksum (MD5)
7322beb1885b211a13a0975873316f64
Author(s)
Lemettinen, Jori
Okumura, Hironori
Palacios, Tomas
Date Issued
2018
Journal
Applied Physics Express
Publisher
Japan Society of Applied Physics
Citation
Lemettinen, Jori, Hironori Okumura, Tomás Palacios and Sami Suihkonen. "N-polar AlN buffer growth by metal–organic vapor phase epitaxy for transistor applications." Applied Physics Express 11 (2018).
Version
Author's final manuscript
Abstract
We present the electrical characterization of N-polar AlN layers grown by metal-organic vapor phase epitaxy and the demonstration of N-polar AlN-channel metal-semiconductor field-effect transistors (MESFETs). A high concentration of silicon is unintentionally incorporated during the high-temperature growth of N-polar AlN, causing a high buffer leakage current. The silicon concentration decreases from 2 × 1018 to 9 × 1015 cm-3 with decreasing growth temperature, reducing the buffer leakage current to 5.6 nA/mm at a 100 V bias. The N-polar AlN MESFET exhibits an off-state drain current of 0.27 nA/mm and a transistor on/off ratio of 4.6 × 104 owing to the low leakage of AlN buffer layers.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Massachusetts Institute of Technology. Microsystems Technology Laboratories
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Creative Commons Attribution-Noncommercial-Share Alike
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DOI of Published Version
https://doi.org/10.7567/APEX.11.101002
