Gold Thermocompression Wafer Bonding
Name
AMMNS008.pdf
Size
896.93 KB
Format
Adobe PDF
Checksum (MD5)
1a06fe8a3118296e98f3e258471135ec
Author(s)
Spearing, S. Mark
Tsau, Christine H.
Schmidt, Martin A.
Date Issued
January 2004
Series/Report no.
Advanced Materials for Micro- and Nano-Systems (AMMNS);
Abstract
Thermocompression bonding of gold is a promising technique for the fabrication and packaging microelectronic and MEMS devices. The use of a gold interlayer and moderate temperatures and pressures results in a hermetic, electrically conductive bond. This paper documents work conducted to model the effect of patterning in causing pressure non-uniformities across the wafer and its effect on the subsequent fracture response. A finite element model was created that revealed pattern-dependent local pressure variations of more than a factor of three. This variation is consistent with experimental observations of bond quality across individual wafers A cohesive zone model was used to investigate the resulting effect of non-uniform bond quality on the fracture behavior. A good, qualitative agreement was obtained with experimental observations of the load-displacement response of bonds in fracture tests.
Subjects
wafer bonding
thermocompression
cohesive zone
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