On Backscattering and Mobility in Nanoscale Silicon MOSFETs
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Jeong_On-Backscattering-and-Mobility.pdf
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Author(s)
Jeong, Changwook
Antoniadis, Dimitri A.
Lundstrom, Mark S.
Date Issued
October 2009
Journal
IEEE Transactions on Electron Devices
Publisher
Institute of Electrical and Electronics Engineers
Citation
Changwook Jeong, D.A. Antoniadis, and M.S. Lundstrom. “On Backscattering and Mobility in Nanoscale Silicon MOSFETs.” Electron Devices, IEEE Transactions on 56.11 (2009): 2762-2769. © 2009 IEEE
Version
Final published version
Abstract
The DC current-voltage characteristics of an n-channel silicon MOSFET with an effective gate length of about 60 nm are analyzed and interpreted in terms of scattering theory. The experimental results are found to be consistent with the predictions of scattering theory - the drain current is closer to the ballistic limit under high drain bias than under low drain bias, and the on-current in strong inversion is limited by a small portion of the channel near the source. The question of how the low- and high- V DS drain currents are related to the near-equilibrium, long-channel mobility is also addressed. In the process of this analysis, theoretical and experimental uncertainties that make it difficult to extract numerically precise values of the scattering parameters are identified.
Subjects
mobility
mean free path
MOSFETs
Backscattering coefficient
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Massachusetts Institute of Technology. Microsystems Technology Laboratories
Terms of Use
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
Persistent DSpace Link
DOI of Published Version
http://dx.doi.org/10.1109/ted.2009.2030844
