Temperature Dependence of Digital Single-Event Transients in Bulk and Fully-Depleted SOI Technologies
Name
Gadlage-2009-Temperature Dependence of Digital Single-Event Transients in Bulk and Fully-Depleted SOI Technologies.pdf
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751.15 KB
Format
Adobe PDF
Checksum (MD5)
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Author(s)
Gouker, Pascale M.
Gadlage, Matthew J.
Ahlbin, Jonathan R.
Ramachandra, Vishwanath
Dinkin, Cody A.
Bhuva, Bharat L.
Narasimham, Balaji
Schrimpf, Ronald D.
McCurdy, Michael W.
Alles, Michael L.
Date Issued
December 2009
Journal
IEEE Transactions on Nuclear Science
Publisher
Institute of Electrical and Electronics Engineers
Citation
Gadlage, M.J. et al. “Temperature Dependence of Digital Single-Event Transients in Bulk and Fully-Depleted SOI Technologies.” Nuclear Science, IEEE Transactions on 56.6 (2009): 3115-3121. ©2009 Institute of Electrical and Electronics Engineers.
Version
Final published version
Abstract
Factors that affect single-event transient pulse widths, such as drift, diffusion, and parasitic bipolar transistor parameters, are also strong functions of operating temperature. In this paper, SET pulse-width measurements are performed over a wide temperature range in both bulk and fully-depleted SOI (silicon on insulator) technologies. The average pulse-width increases with temperature for the bulk process, but not for the FDSOI process.
Subjects
Heavy ions
ion radiation effects
silicon-on-insulator technology
single event transients
single event upset (SEU)
MIT Department
Lincoln Laboratory
Terms of Use
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
https://doi.org/10.1109/tns.2009.2034150
