Graphene-on-Insulator Transistors Made Using C on Ni Chemical-Vapor Deposition
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Kedzierski-2009-Graphene-on-Insulato.pdf
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Author(s)
Keast, Craig L.
Wyatt, Peter W.
Kong, Jing
Reina, Alfonso
Hsu, Pei-Lan
Healey, Paul D.
Kedzierski, Jakub T.
Date Issued
June 2009
Journal
IEEE Electron Device Letters
Publisher
Institute of Electrical and Electronics Engineers
Citation
Kedzierski, J. et al. “Graphene-on-Insulator Transistors Made Using C on Ni Chemical-Vapor Deposition.” Electron Device Letters, IEEE 30.7 (2009): 745-747. © 2009 Institute of Electrical and Electronics Engineers.
Version
Final published version
Abstract
Graphene transistors are made by transferring a thin graphene film grown on Ni onto an insulating SiO[subscript 2] substrate. The properties and integration of these graphene-on-insulator transistors are presented and compared to the characteristics of devices made from graphitized SiC and exfoliated graphene flakes.
Subjects
graphene transistors
graphene
epitaxial graphene
chemical-vapor deposition (CVD)
carbon transistors
Carbon CVD
MIT Department
Lincoln Laboratory
Terms of Use
Article is made available in accordance with the publisher’s policy and may be subject to US copyright law. Please refer to the publisher’s site for terms of use.
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DOI of Published Version
http://dx.doi.org/10.1109/led.2009.2020615
