Antimony-Doped Tin(II) Sulfide Thin Films
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Buonassisi_Antimony-doped Tin.pdf
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Author(s)
Sinsermsuksakul, Prasert
Chakraborty, Rupak
Kim, Sang Bok
Heald, Steven M.
Buonassisi, Tonio
Gordon, Roy G.
Date Issued
November 2012
Journal
Chemistry of Materials
Publisher
American Chemical Society (ACS)
Citation
Sinsermsuksakul, Prasert et al. “Antimony-Doped Tin(II) Sulfide Thin Films.” Chemistry of Materials 24.23 (2012): 4556–4562.
Version
Author's final manuscript
Abstract
Thin-film solar cells made from earth-abundant, inexpensive, and nontoxic materials are needed to replace the current technologies whose widespread use is limited by their use of scarce, costly, and toxic elements. Tin monosulfide (SnS) is a promising candidate for making absorber layers in scalable, inexpensive, and nontoxic solar cells. SnS has always been observed to be a p-type semiconductor. Doping SnS to form an n-type semiconductor would permit the construction of solar cells with p-n homojunctions. This paper reports doping SnS films with antimony, a potential n-type dopant. Small amounts of antimony (1%) were found to greatly increase the electrical resistance of the SnS. The resulting intrinsic SnS(Sb) films could be used for the insulating layer in a p-i-n design for solar cells. Higher concentrations (5%) of antimony did not convert the SnS(Sb) to low-resistivity n-type conductivity, but instead the films retain such a high resistance that the conductivity type could not be determined. Extended X-ray absorption fine structure analysis reveals that the highly doped films contain precipitates of a secondary phase that has chemical bonds characteristic of metallic antimony, rather than the antimony–sulfur bonds found in films with lower concentrations of antimony.
MIT Department
Massachusetts Institute of Technology. Department of Mechanical Engineering
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Creative Commons Attribution-Noncommercial-Share Alike 3.0
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DOI of Published Version
https://doi.org/10.1021/cm3024988
