Tunable quantum Hall edge conduction in bilayer graphene through spin-orbit interaction
Name
PhysRevB.98.115307.pdf
Size
1.08 MB
Format
Adobe PDF
Checksum (MD5)
c89fc10f7972f72d8114d22989893324
Author(s)
Khoo, Jun Yong
Levitov, Leonid
Date Issued
September 2018
Journal
Physical Review B
Publisher
American Physical Society
Citation
Khoo, Jun Yong, and Leonid Levitov. “Tunable Quantum Hall Edge Conduction in Bilayer Graphene through Spin-Orbit Interaction.” Physical Review B, vol. 98, no. 11, Sept. 2018. © 2018 American Physical Society
Version
Final published version
Abstract
Bilayer graphene, in the presence of a one-sided spin-orbit interaction (SOI) induced by a suitably chosen substrate, is predicted to exhibit unconventional quantum Hall states. The new states arise due to strong SOI-induced splittings of the eight zeroth Landau levels, which are strongly layer polarized, residing fully or partially on one of the two graphene layers. In particular, an Ising SOI on the meV scale is sufficient to invert the Landau level order between the n=0 and n=1 orbital levels under moderately weak magnetic fields B≲10 T. Furthermore, when the Ising field opposes the B field, the order of the spin-polarized levels can also be inverted. We show that, under these conditions, three different compensated electron-hole phases, with equal concentrations of electrons and holes, can occur at ν=0 filling. The three phases have distinct edge conductivity values. One of the phases is especially interesting, since its edge conduction can be turned on and off by switching the sign of the interlayer bias.
MIT Department
Massachusetts Institute of Technology. Department of Physics
Terms of Use
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
Persistent DSpace Link
DOI of Published Version
https://doi.org/10.1103/PhysRevB.98.115307
