Stress and temperature coupling effects on dislocation density reduction in multicrystalline silicon
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Buonassisi_Stress and temperature.pdf
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1.79 MB
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c06c31c9a922b3d3c41a16924c229571
Author(s)
Castellanos, Sergio
Bertoni, Mariana I.
Vogl, Michelle
Fecych, Alexandria
Buonassisi, Tonio
Date Issued
June 2010
Journal
Proceedings of the 2010 35th IEEEPhotovoltaic Specialists Conference (PVSC)
Publisher
Institute of Electrical and Electronics Engineers
Citation
Castellanos, Sergio et al. “Stress and Temperature Coupling Effects on Dislocation Density Reduction in Multicrystalline Silicon.” 2010 35th IEEE Photovoltaic Specialists Conference (PVSC), 20-25 June 2010, Honolulu, HI, IEEE (2010). 000357–000358. CrossRef. Web. ©2010 IEEE.
Version
Final published version
Abstract
In multicrystalline silicon (mc-Si), the presence of dislocation-rich areas limits solar cell conversion efficiencies. Previous studies have demonstrated that dislocation densities higher than 106 cm-2 can dramatically decrease the minority carrier lifetime. High dislocation densities, and their decoration with impurities, can limit minority carrier lifetime even after phosphorous diffusion or hydrogen passivation. We previously proposed a method to remove dislocations from mc-Si by high-temperature annealing, demonstrating dislocation density reductions of 95% approximately. We demonstrated that the dependence of dislocation density reduction on annealing temperature is much more pronounced that the dependence on annealing time. In this contribution, we propose stress as an additional mechanism to enhance dislocation density reduction. We discuss the relationship between temperature, stresses and dislocation density in string ribbon.
MIT Department
Massachusetts Institute of Technology. Department of Mechanical Engineering
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
https://doi.org/10.1109/PVSC.2010.5616893
