Direct band gap narrowing in highly doped Ge
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Kimerling_Direct band.pdf
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Author(s)
Han, Zhaohong
Cai, Yan
Kimerling, Lionel C.
Michel, Jurgen
Camacho-Aguilera, Rodolfo Ernesto
Date Issued
April 2013
Journal
Applied Physics Letters
Publisher
American Institute of Physics (AIP)
Citation
Camacho-Aguilera, Rodolfo et al. “Direct Band Gap Narrowing in Highly Doped Ge.” Applied Physics Letters 102.15 (2013): 152106. © 2013 AIP Publishing LLC
Version
Final published version
Abstract
Direct band gap narrowing in highly doped n-type Ge is observed through photoluminescence measurements by determining the spectrum peak shift. A linear relationship between the direct band gap emission and carrier concentration is observed. We propose a first order phenomenological model for band gap narrowing based on two parameters whose values for Ge are E[subscript BGN] = 0.013 eV and Δ[subscript BGN] = 10[superscript −21] eV/cm[superscript −3]. The application of these results to non-invasive determination of the active carrier concentration in submicron areas in n-type Ge structures is demonstrated.
MIT Department
MIT Materials Research Laboratory
Massachusetts Institute of Technology. Department of Materials Science and Engineering
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DOI of Published Version
https://doi.org/10.1063/1.4802199
