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Sub-nanometre channels embedded in two-dimensional materials

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Author(s)
Han, Yimo
•
Li, Ming-Yang
•
Marsalis, Mark A.
•
Li, Lain-Jong
•
Muller, David A.
•
Jung, Gang Seob
•
Qin, Zhao
•
Buehler, Markus J
Date Issued
December 2017
Journal
Nature Materials
Publisher
Springer Nature
Citation
Han, Yimo et al. “Sub-Nanometre Channels Embedded in Two-Dimensional Materials.” Nature Materials 17, 2 (December 2017): 129–133 © 2017 Macmillan Publishers Limited, part of Springer Nature
Version
Author's final manuscript
Abstract
Two-dimensional (2D) materials are among the most promising candidates for next-generation electronics due to their atomic thinness, allowing for flexible transparent electronics and ultimate length scaling. Thus far, atomically thin p-n junctions, metal-semiconductor contacts, and metal-insulator barriers have been demonstrated. Although 2D materials achieve the thinnest possible devices, precise nanoscale control over the lateral dimensions is also necessary. Here, we report the direct synthesis of sub-nanometre-wide one-dimensional (1D) MoS2 channels embedded within WSe2 monolayers, using a dislocation-catalysed approach. The 1D channels have edges free of misfit dislocations and dangling bonds, forming a coherent interface with the embedding 2D matrix. Periodic dislocation arrays produce 2D superlattices of coherent MoS2 1D channels in WSe2. Using molecular dynamics simulations, we have identified other combinations of 2D materials where 1D channels can also be formed. The electronic band structure of these 1D channels offers the promise of carrier confinement in a direct-gap material and the charge separation needed to access the ultimate length scales necessary for future electronic applications.
MIT Department
Massachusetts Institute of Technology. Department of Civil and Environmental Engineering
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
Persistent DSpace Link
http://hdl.handle.net/1721.1/117163
DOI of Published Version
https://doi.org/10.1038/NMAT5038
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