Nanometer-Scale III-V MOSFETs
Name
Nanometer-scale_III-V_MOSFETs.pdf
Description
Accepted version
Size
570.38 KB
Format
Adobe PDF
Checksum (MD5)
d6561c9bdac6446952762821a8059eac
Author(s)
Del Alamo, Jesus A
Antoniadis, Dimitri A
Lin, Jianqiang
Lu, Wenjie
Vardi, Alon
Zhao, Xin
Date Issued
2016
Journal
IEEE Journal of the Electron Devices Society
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Version
Author's final manuscript
Abstract
© 2013 IEEE. After 50 years of Moore's Law, Si CMOS, the mainstream logic technology, is on a course of diminishing returns. The use of new semiconductor channel materials with improved transport properties over Si offer the potential for device scaling to nanometer dimensions and continued progress. Among new channel materials, III-V compound semiconductors are particularly promising. InGaAs is currently the most attractive candidate for future III-V based n-type MOSFETs while InGaSb is of great interest for p-channel MOSFETs. At the point of most likely deployment, devices based on these semiconductors will have a highly three-dimensional architecture. This paper reviews recent progress toward the development of nanoscale III-V MOSFETs based on InGaAs and InGaSb with emphasis on scalable technologies and device architectures and relevant physics. Progress in recent times has been brisk but much work remains to be done before III-V CMOS can become a reality.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Terms of Use
Creative Commons Attribution-Noncommercial-Share Alike
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DOI of Published Version
https://doi.org/10.1109/JEDS.2016.2571666
