Asymmetric hot-carrier thermalization and broadband photoresponse in graphene-2D semiconductor lateral heterojunctions
Name
eaav1493.full.pdf
Description
Published version
Size
957.96 KB
Format
Adobe PDF
Checksum (MD5)
823310e8ed0ccbbfcd0a8254aac7e90f
Author(s)
Lin, Yuxuan
Ma, Qiong
Shen, Pin-Chun
Ilyas, Batyr
Bie, Yaqing
Liao, Albert D.
Ergecen, Emre
Han, Bingnan
Mao, Nannan
Zhang, Xu
Date Issued
June 2019
Journal
Science Advances
Publisher
American Association for the Advancement of Science (AAAS)
Citation
Yuxuan Lin et al. "Asymmetric hot-carrier thermalization and broadband photoresponse in graphene-2D semiconductor lateral heterojunctions." Science Advances 5, 6 (June 2019): eaav1493 © 2019 The Authors
Version
Final published version
Abstract
The massless Dirac electron transport in graphene has led to a variety of unique light-matter interaction phenomena, which promise many novel optoelectronic applications. Most of the effects are only accessible by breaking the spatial symmetry, through introducing edges, p-n junctions, or heterogeneous interfaces. The recent development of direct synthesis of lateral heterostructures offers new opportunities to achieve the desired asymmetry. As a proof of concept, we study the photothermoelectric effect in an asymmetric lateral heterojunction between the Dirac semimetallic monolayer graphene and the parabolic semiconducting monolayer MoS2. Very different hot-carrier cooling mechanisms on the graphene and the MoS2 sides allow us to resolve the asymmetric thermalization pathways of photoinduced hot carriers spatially with electrostatic gate tunability. We also demonstrate the potential of graphene-2D semiconductor lateral heterojunctions as broadband infrared photodetectors. The proposed structure shows an extreme in-plane asymmetry and provides a new platform to study light-matter interactions in low-dimensional systems.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Massachusetts Institute of Technology. Department of Physics
MIT Materials Research Laboratory
Massachusetts Institute of Technology. Research Laboratory of Electronics
Massachusetts Institute of Technology. Microsystems Technology Laboratories
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Creative Commons Attribution NonCommercial License 4.0
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DOI of Published Version
https://doi.org/10.1126/sciadv.aav1493
