High-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFETs) for Telecommunications
Name
RLE_PR_132_01_01s_07.pdf
Size
2.3 MB
Format
Adobe PDF
Checksum (MD5)
856c23b0cf4f7b4d21763253621cd769
Author(s)
del Alamo, Jesus A.
Bahl, Sandeep R.
Azzam, Walid
Odoardi, Angela R.
Date Issued
1989-01-01 to 1989-12-31
Publisher
Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT)
Series/Report no.
Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 132
Description
Contains an introduction and reports on experiments and device results.
Terms of Use
Copyright (c) 2008 by the Massachusetts Institute of Technology. All rights reserved.
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