Scanning-helium-ion-beam lithography with hydrogen silsesquioxane resist
Name
Berggren-Scanning-helium-ion-beam.pdf
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248.32 KB
Format
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Checksum (MD5)
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Author(s)
Winston, Donald
Cord, Bryan M.
Ming, B.
Bell, David C.
DiNatale, W. F.
Stern, L. A.
Vladar, A. E.
Postek, M. T.
Mondol, Mark K.
Yang, Joel K. W.
Date Issued
December 2009
Journal
Journal of Vacuum Science and Technology B Microelectronics and Nanometer Structures
Publisher
American Vacuum Society (AVS)
Citation
Winston, D. et al. “Scanning-helium-ion-beam Lithography with Hydrogen Silsesquioxane Resist.” Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 27.6 (2009): 2702. © 2009 American Vacuum Society
Version
Final published version
Abstract
A scanning-helium-ion-beam microscope is now commercially available. This microscope can be used to perform lithography similar to, but of potentially higher resolution than, scanning electron-beam lithography. This article describes the control of this microscope for lithography via beam steering/blanking electronics and evaluates the high-resolution performance of scanning helium-ion-beam lithography. The authors found that sub-10 nm-half-pitch patterning is feasible. They also measured a point-spread function that indicates a reduction in the micrometer-range proximity effect typical in electron-beam lithography.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Massachusetts Institute of Technology. Research Laboratory of Electronics
Terms of Use
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
Persistent DSpace Link
DOI of Published Version
https://doi.org/10.1116/1.3250204
