Making BaZrS 3 Chalcogenide Perovskite Thin Films by Molecular Beam Epitaxy
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BaZrS3 MBE synthesis v6 - AdvFnMater response.pdf
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Author(s)
Sadeghi, Ida
Ye, Kevin
Xu, Michael
Li, Yifei
LeBeau, James M.
Jaramillo, Rafael
Date Issued
August 16, 2021
Journal
Advanced Functional Materials
Publisher
Wiley
Citation
Sadeghi, Ida, Ye, Kevin, Xu, Michael, Li, Yifei, LeBeau, James M. et al. 2021. "Making BaZrS 3 Chalcogenide Perovskite Thin Films by Molecular Beam Epitaxy." Advanced Functional Materials, 31 (45).
Version
Author's final manuscript
Abstract
We demonstrate the making of BaZrS3 thin films by molecular beam epitaxy (MBE). BaZrS3
forms in the orthorhombic distorted-perovskite structure with corner-sharing ZrS6 octahedra. The
single-step MBE process results in films smooth on the atomic scale, with near-perfect BaZrS3
stoichiometry and an atomically-sharp interface with the LaAlO3 substrate. The films grow
epitaxially via two, competing growth modes: buffered epitaxy, with a self-assembled interface
layer that relieves the epitaxial strain, and direct epitaxy, with rotated-cube-on-cube growth that
accommodates the large lattice constant mismatch between the oxide and the sulfide perovskites.
This work sets the stage for developing chalcogenide perovskites as a family of semiconductor
alloys with properties that can be tuned with strain and composition in high-quality epitaxial thin
films, as has been long-established for other systems including Si-Ge, III-Vs, and II-Vs. The
methods demonstrated here also represent a revival of gas-source chalcogenide MBE.
Subjects
Electrochemistry
Condensed Matter Physics
Biomaterials
Electronic, Optical and Magnetic Materials
MIT Department
Massachusetts Institute of Technology. Department of Materials Science and Engineering
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DOI of Published Version
https://doi.org/10.1002/adfm.202105563
