Breakdown mechanism in AlGaN/GaN HEMTs on Si substrate
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Palacios_Breakdown mechanism.pdf
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Author(s)
Lu, Bin
Piner, Edwin L.
Palacios, Tomas
Date Issued
August 2010
Journal
Proceedings of the Device Research Conference (DRC), 2010
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Lu, Bin, Edwin L. Piner, and Tomas Palacios. “Breakdown Mechanism in AlGaN/GaN HEMTs on Si Substrate.” Proceedings of the Device Research Conference (DRC), 2010. 193–194. © Copyright 2010 IEEE
Version
Final published version
Abstract
AlGaN/GaN high electron mobility transistors (HEMTs) grown on Si substrates have attracted a great interest for power electronics applications. Despite the low cost of the Si substrate, the breakdown voltage (V[subscript bk]) of AlGaN/GaN HEMTs grown on Si (less than 600 V for 2 μm total nitride epilayer) is much lower than that grown on SiC (1.9 kV for 2 μm total epi-layer). Although several approaches have been reported to improve V[subscript bk], the breakdown mechanism in these transistors is still not well understood. This paper studies for the first time the breakdown mechanism in AlGaN/GaN HEMTs on Si substrates. In addition, by transferring the AlGaN/GaN HEMTs grown on Si to a glass wafer, we have achieved devices with V[subscript bk] in excess of 1.45 kV and specific on-resistance of 5.3 mΩ.cm[superscipt 2].
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
https://doi.org/10.1109/DRC.2010.5551907
