Current-induced Dynamics of Easy-Plane Antiferromagnets
Name
ZHANG-pxzhang-PhD-EECS-2023-Thesis.pdf
Description
Thesis PDF
Size
11.58 MB
Format
Adobe PDF
Checksum (MD5)
bbc072aaeaeccee523e8fd3d61282e92
Author(s)
Zhang, Pengxiang
Advisor(s)
Liu, Luqiao
Date Issued
February 2023
Publisher
Massachusetts Institute of Technology
Abstract
Antiferromagnetic memory devices are expected to be very fast, stable, dense and energy-efficient, making them promising for the next generation non-volatile random-access memory. However, in antiferromagnets, it used to be challenging to accurately understand the current-induced dynamics, especially the spin-orbit-torque switching dynamics. To realize a practical antiferromagnetic memory device, we must overcome the challenge.
In this PhD Thesis, I discussed about the systematic and quantitative study of a model material, collinear easy-plane antiferromagnetic insulator α-Fe2O3 covered by Pt, for non-spin-orbit-torque switching mechanisms, magnon spin transport, and finally, the long-anticipated damping-like-torque switching, and the method to quantitatively characterize the spin-orbit torques. And I also discussed about the study about the damping-like-torque switching of a non-collinear easy-plane antiferromagnetic metal Mn3Sn, and the handedness anomaly of the switching direction.
These studies deepen the scientific understandings of spin-orbit torque dynamics in antiferromagnets, and pave the way to real-life applications of antiferromagnetic memory devices.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
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