Open volume defect accumulation with irradiation in GaN, GaP, InAs, InP, Si, ZnO, and MgO
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225701_1_5.0147324.pdf
Description
Published version
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8.05 MB
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Adobe PDF
Checksum (MD5)
edb544000f5dc8f97f445ad3f5608a4d
Author(s)
Logan, JV
Woller, KB
Webster, PT
Morath, CP
Short, MP
Date Issued
December 14, 2023
Journal
Journal of Applied Physics
Publisher
AIP Publishing
Citation
J. V. Logan, K. B. Woller, P. T. Webster, C. P. Morath, M. P. Short; Open volume defect accumulation with irradiation in GaN, GaP, InAs, InP, Si, ZnO, and MgO. J. Appl. Phys. 14 December 2023; 134 (22): 225701.
Version
Final published version
Abstract
Vacancies are generated in semiconductor devices while operating in the space radiation environment, impacting semiconductor carrier concentrations and dynamics. Positron annihilation lifetime spectroscopy (PALS) is used to probe these defect concentrations in bulk grown GaN, GaP, InAs, InP, Si, MgO, and ZnO both as-grown and as a function of 2–4 MeV proton irradiation. All samples were irradiated to yield a common initial damage production and characterized identically. In as-grown samples, PALS reveals vacancy concentrations above the saturation limit in the oxides, disabling further analysis. As a function of dose, of the materials in which defect accumulation could be probed, it is observed that GaN is the most resistant to the accumulation of defects (attributed to the Ga vacancies) and Si is the least. GaP (attributed to the Ga vacancy) and InAs exhibit slightly higher rates of vacancy accumulation than GaN. InP exhibits high defect accumulation rates approaching that of Si. This information is key to understanding the operation of a diverse set of semiconductors in the space radiation environment.
MIT Department
Massachusetts Institute of Technology. Department of Nuclear Science and Engineering
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DOI of Published Version
10.1063/5.0147324
