Magnetostatic interaction in nanowires
Name
900736926-MIT.pdf
Description
Full printable version
Size
13.23 MB
Format
Adobe PDF
Checksum (MD5)
92667d55925b88ef1a3f6283a3f2468b
Author(s)
Siddiqui, Saima Afroz
Advisor(s)
Marc A. Baldo.
Date Issued
2014
Publisher
Massachusetts Institute of Technology
Abstract
Nonvolatile memory and logic devices rely on the manipulation of domain walls in magnetic nanowires, and scaling of these devices requires an understanding of domain wall behavior as a function of the wire width. Due to the increased importance of edge roughness and microstructure in narrow lines, domain wall pinning increases dramatically as the wire dimensions decrease and stochastic behavior is expected depending on the distribution of pinning sites. This work reports on the field driven domain wall statistics in sub-100 nm wide nanowires made from Co films of 8 nm thickness made by an electron beam lithography and etching process that minimizes edge roughness.
Description
Thesis: S.M., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2014.
Cataloged from PDF version of thesis.
Includes bibliographical references (pages 61-65).
Subjects
Electrical Engineering and Computer Science.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Terms of Use
M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.
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